NTBL0 Model Download Search Results
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NTBL060N065SC1
onsemi
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1 | Max Junction Temperature 175°C; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 74 nC); Low Effective Output Capacitance (Coss = 113 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 44 mΩ @ Vgs : 18V; 650V rated; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.9 Ω | Other | NTBL060N065SC1 |
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NTBL023N065M3S
onsemi
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1 | Moisture Sensitivity Level 1 guarantee; Max Junction Temperature 175°C; Leadless thin SMD package; Kelvin Source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 69 nC); Typ. RDS(on) = 23 mΩ at Vgs = 18V; High Speed Switching with Low Capacitance (Coss = 152 pF); 15V to 18V Gate Drive; Zero reverse recovery current of body diode; 650V rated; 100% UIL Tested; RoHS Compliant | Other | NTBL023N065M3S |
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NTBL075N065SC1
onsemi
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1 | Max Junction Temperature 175°C; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 59 nC); Low Effective Output Capacitance (Coss = 109 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 57 mΩ @ Vgs : 18V; 650V rated; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 5.6 Ω | Other | NTBL075N065SC1 |
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NTBL032N065M3S
onsemi
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1 | Leadless thin SMD package; Kelvin Source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 55 nC); Typ. RDS(on) = 32 mΩ at Vgs = 18V; High Speed Switching with Low Capacitance (Coss = 113 pF); 15V to 18V Gate Drive; Zero reverse recovery current of body diode; 650V rated; 100% UIL Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Max Junction Temperature 175°C | Other | NTBL032N065M3S |
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NTBL050N65S3H
onsemi
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1 | 700 V @ TJ = 150°C; Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(eff.) = 909 pF); Ultra Low Gate Charge (Typ. Qg = 98 nC); Typ. RDS(on) = 40 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.6 Ω | Other | NTBL050N65S3H |
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NTBL045N065SC1
onsemi
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1 | Max Junction Temperature 175°C; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 105 nC); Low Effective Output Capacitance (Coss = 162 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 33 mΩ @ Vgs : 18V; 650V rated; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.1 Ω | Other | NTBL045N065SC1 |
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NTBL048N60S5H
onsemi
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1 | 650 V @ TJ = 150°C; Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(tr.) = 1173 pF); Ultra Low Gate Charge (Typ. Qg = 92.8 nC); Typ. RDS(on) = 38.4 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.66 Ω | Other | NTBL048N60S5H |
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NTBL061N60S5H
onsemi
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1 | Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(tr.) = 933 pF); Ultra Low Gate Charge (Typ. Qg = 73.1 nC); Typ. RDS(on) = 48.8 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.68 Ω; 650 V @ TJ = 150°C | NTBL061N60S5H |
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NTBL012N065M3S
onsemi
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1 | Power Field-Effect Transistor | NTBL012N065M3S |
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NTBL070N65S3
onsemi
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1 | Typ. RDS(on) = 57 mΩ; 700 V @ TJ = 150 oC; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Moisture Sensitivity Level 1 guarantee; Ultra Low Gate Charge (Typ. Qg = 82 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 724 pF); Optimized Capacitance; 100% Avalanche Tested; RoHS Compliant | NTBL070N65S3 |
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NTBL082N65S3HF
onsemi
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1 | 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 79 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 682 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 70 mΩ; 100% Avalanche Tested; RoHS Compliant | NTBL082N65S3HF |
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NTBL080N60S5H
onsemi
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1 | 650 V @ TJ = 150°C; Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(tr.) = 719 pF); Ultra Low Gate Charge (Typ. Qg = 55.8 nC); Typ. RDS(on) = 64 mΩ; 100% Avalanche Tested; Internal Gate Resistance: 1.17 Ω; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee | NTBL080N60S5H |
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NTBL095N65S3H
onsemi
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1 | 700 V @ TJ = 150°C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 58 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF); Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 77 m Ω; 100% Avalanche Tested; RoHS Compliant | NTBL095N65S3H |
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NTBL016N065M3S
onsemi
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0 | NTBL016N065M3S |
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![Part Image](["https://componentsearchengine.com/2D/0/21943492.png",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/21943491.png",null,null])
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