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NTBL045N065SC1 - onsemi

Description: Max Junction Temperature 175°C; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 105 nC); Low Effective Output Capacitance (Coss = 162 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 33 mΩ @ Vgs : 18V; 650V rated; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.1 Ω

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NTBL045N065SC1 - onsemi PCB footprint - Other - Other - NTBL045N065SC1-1
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NTBL045N065SC1 Details

  • Manufacturer Part Number:

    NTBL045N065SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    H-PSOF8L 9.90x10.38x2.30, 1.20P

  • Package Description:

    HSOF-8

  • Manufacturer Package Code:

    100DC

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    73 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    MO-299

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    348 W

  • Pulsed Drain Current-Max (IDM):

    182 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTBL045N065SC1 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the thermal relief pattern.
  • To ensure the device is properly biased for optimal performance, it's recommended to follow the application circuit shown in the datasheet, which includes a bootstrap circuit to generate the necessary gate drive voltage. Additionally, the device should be operated within the recommended voltage and current ranges.
  • Operating the device at high temperatures can reduce its reliability and lifespan. The device is rated for operation up to 150°C, but prolonged operation above 125°C can lead to increased thermal resistance, reduced current handling, and increased risk of thermal runaway. It's recommended to implement thermal management strategies, such as heat sinks or cooling systems, to keep the device temperature below 125°C.
  • To protect the device from ESD, it's recommended to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, the device should be connected to a ground plane or a protective circuit, such as a TVS diode, to prevent ESD damage.
  • Operating the device at high frequencies can lead to increased switching losses, reduced efficiency, and increased electromagnetic interference (EMI). It's recommended to follow the recommended operating frequency range and to implement proper layout and decoupling techniques to minimize EMI and switching losses.

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