NTBL080N60S5H - onsemi

Description: 650 V @ TJ = 150°C; Leadless thin SMD package; Kelvin Source Configuration; Low Effective Output Capacitance (Typ. Coss(tr.) = 719 pF); Ultra Low Gate Charge (Typ. Qg = 55.8 nC); Typ. RDS(on) = 64 mΩ; 100% Avalanche Tested; Internal Gate Resistance: 1.17 Ω; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee