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NTBL082N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 79 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 682 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 70 mΩ; 100% Avalanche Tested; RoHS Compliant

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