NTH4L018N075SC1 - onsemi

Description: RoHS Compliant; Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 13.5 mΩ at Vgs = 18V; 100% UIL Tested; TJ = 175°C; Ultra Low Gate Charge (Typ. Qg = 262 nC); High Speed Switching with Low Capacitance (Coss = 365 pF)