NTH4L025N065SC1 - onsemi

Description: Tj = 175°C; Ultra Low Gate Charge (Typ. Qg = 164 nC); High Speed Switching with Low Capacitance (Coss = 278 pF); Zero reverse recovery current of body diode; Kelvin Source configuration; Max RDS(on) = 19 mΩ at Vgs = 18V; 100% UIL Tested; RoHS Compliant