NTH4L030N120M3S - onsemi

Description: New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 107 nC); High Speed Switching with Low Capacitance (Coss = 106 pF); 15V to 18V Gate Drive; 100% Avalanche Tested; Halide Free and RoHS Compliant