NTH4LN032N065M3S - onsemi
Description: Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO247-4L, THIN LEADS , through hole , 139 mJ , ?55 °C to +175 °C
Description: Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO247-4L, THIN LEADS , through hole , 139 mJ , ?55 °C to +175 °C
