NTH4LN040N65S3H - onsemi

Description: 700 V @ TJ = 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 1267 pF); Ultra Low Gate Charge (Typ. Qg = 132 nC); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 32 mΩ; Internal Gate Resistance: 0.7 Ω