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NTH4LN040N65S3H - onsemi

Description: 700 V @ TJ = 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 1267 pF); Ultra Low Gate Charge (Typ. Qg = 132 nC); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 32 mΩ; Internal Gate Resistance: 0.7 Ω

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NTH4LN040N65S3H - onsemi PCB footprint - Other - Other - NTH4LN040N65S3H-2
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NTH4LN040N65S3H - onsemi  - 3D model - Other - NTH4LN040N65S3H-2
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NTH4LN040N65S3H Details

  • Manufacturer Part Number:

    NTH4LN040N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 4-LEAD, THIN LEADS

  • Manufacturer Package Code:

    340CW

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    675 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    62 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    379 W

  • Pulsed Drain Current-Max (IDM):

    174 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTH4LN040N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Also, ensure proper thermal design, including heat sinking and airflow, to keep the device within the specified temperature range.
  • The NTH4LN040N65S3H has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.
  • Yes, the NTH4LN040N65S3H is suitable for high-reliability applications, including automotive and aerospace. However, it's essential to follow the recommended operating conditions, and onsemi provides additional documentation and support for these applications, such as AEC-Q101 qualification and PPAP (Production Part Approval Process) documentation.
  • The optimal gate drive voltage for the NTH4LN040N65S3H depends on the specific application and operating conditions. A general guideline is to use a gate drive voltage between 10V and 15V, but it's recommended to consult the datasheet and application notes for more detailed information.

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