NTH4L Model Download Search Results
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NTH4L020N090SC1
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1 | RoHS Compliant; 100% UIL Tested; 900V Rating; High Junction Temperature | Other | NTH4L020N090SC1 |
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NTH4L030N120M3S
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1 | New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 107 nC); High Speed Switching with Low Capacitance (Coss = 106 pF); 15V to 18V Gate Drive; 100% Avalanche Tested; Halide Free and RoHS Compliant | Other | NTH4L030N120M3S |
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NTH4L080N120SC1
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1 | High Junction Temperature; High UIS, Surge Current, and Avalanche; 1200V | Other | NTH4L080N120SC1 |
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NTH4L095N065SC1
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1 | 100% UIL Tested; RoHS Compliant; TJ = 175°C; Ultra Low Gate Charge (Typ. Qg = 50 nC); High Speed Switching with Low Capacitance (Coss = 89 pF); Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 70 mΩ at Vgs = 18V | Other | NTH4L095N065SC1 |
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NTH4L160N120SC1
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1 | High Junction Temperature; 1200V; High UIS, Surge Current, and Avalanche | Other | NTH4L160N120SC1 |
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NTH4L022N120M3S
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1 | New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses; Halide Free and RoHS Compliant; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 137 nC); High Speed Switching with Low Capacitance (Coss = 146 pF); 100% Avalanche Tested; 15V to 18V Gate Drive | Other | NTH4L022N120M3S |
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NTH4LN067N65S3H
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1 | 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 80 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 55 m Ω; Internal Gate Resistance: 0.6 Ω | Other | NTH4LN067N65S3H |
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NTH4L040N120SC1
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1 | High Speed Switching and Low Capacitance; 100% UIL Tested; Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A; 1200V Rated | Other | NTH4L040N120SC1 |
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NTH4L025N065SC1
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1 | Tj = 175°C; Ultra Low Gate Charge (Typ. Qg = 164 nC); High Speed Switching with Low Capacitance (Coss = 278 pF); Zero reverse recovery current of body diode; Kelvin Source configuration; Max RDS(on) = 19 mΩ at Vgs = 18V; 100% UIL Tested; RoHS Compliant | Other | NTH4L025N065SC1 |
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NTH4L040N120M3S
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1 | Ultra Low Gate Charge (QG(tot) = 75 nC); High Speed Switching with Low Capacitance (Coss = 80 pF); 15V to 18V Gate Drive; New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested; Halide Free and RoHS Compliant; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ] | Other | NTH4L040N120M3S |
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NTH4LN040N65S3H
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1 | 700 V @ TJ = 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 1267 pF); Ultra Low Gate Charge (Typ. Qg = 132 nC); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 32 mΩ; Internal Gate Resistance: 0.7 Ω | Other | NTH4LN040N65S3H |
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NTH4L070N120M3S
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1 | New M3S technology: 65 mohm RDS(ON) with low Eon and Eoff losses; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 57 nC); High Speed Switching with Low Capacitance (Coss = 57 pF); 15V to 18V Gate Drive; 100% Avalanche Tested; Halide Free and RoHS Compliant | Other | NTH4L070N120M3S |
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NTH4L060N090SC1
onsemi
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1 | High Junction Temperature; 900V Rating; 100% UIL Tested; RoHS Compliant | Other | NTH4L060N090SC1 |
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NTH4L013N120M3S
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1 | 100% Avalanche Tested; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 254 nC); High Speed Switching with Low Capacitance (Coss = 262 pF); 15V to 18V Gate Drive; New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses; Halide Free and RoHS Compliant | Other | NTH4L013N120M3S |
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NTH4L023N065M3S
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1 | TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 69 nC); High Speed Switching with Low Capacitance (Coss = 153 pF); 15V to 18V Gate Drive; Typ. RDS(on) = 23 mΩ at Vgs = 18V; 100% Avalanche Tested; Halide Free and RoHS Compliant | Other | NTH4L023N065M3S |
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NTH4L032N065M3S
onsemi
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1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L | Other | NTH4L032N065M3S |
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NTH4L014N120M3P
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1 | TO247-4LD package for low common source inductance; 15V to 18V Gate Drive; New M3P technology: 14mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested | Other | NTH4L014N120M3P |
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NTH4L075N065SC1
onsemi
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1 | TJ = 175°C; Ultra Low Gate Charge (Typ. Qg = 61 nC); High Speed Switching with Low Capacitance (Coss = 107 pF); Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 57 mΩ at Vgs = 18V; 100% UIL Tested; RoHS Compliant | Other | NTH4L075N065SC1 |
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NTH4L020N120SC1
onsemi
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1 | Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; 1200V Rated | Other | NTH4L020N120SC1 |
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NTH4L028N170M1
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1 | TO247-4LD package for low common source inductance; 18V to 20V Gate Drive; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested | Other | NTH4L028N170M1 |
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NTH4L018N075SC1
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1 | RoHS Compliant; Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 13.5 mΩ at Vgs = 18V; 100% UIL Tested; TJ = 175°C; Ultra Low Gate Charge (Typ. Qg = 262 nC); High Speed Switching with Low Capacitance (Coss = 365 pF) | Other | NTH4L018N075SC1 |
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NTH4L045N065SC1
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1 | 650V rated; Max RDS(on) = 52.8 mΩ at Vgs = 18V, Id = 20A; Max Junction Temperature 175°C; 100% UIL Tested; RoHS Compliant; High Speed Switching and Low Capacitance | Other | NTH4L045N065SC1 |
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NTH4L015N065SC1
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1 | Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A; High Junction Temperature; 100% UIL Tested; RoHS Compliant; High Speed Switching and Low Capacitance; 650V rated | Other | NTH4L015N065SC1 |
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NTH4L016N065M3S
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1 | N-Channel 650 V 94.3A (Tc) 333W (Tc) Through Hole TO-247-4 -55°C ~ 175°C | Other | NTH4L016N065M3S |
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NTH4L012N065M3S
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1 | N-Channel 650 V 124A (Tc) 428W (Tc) Through Hole TO-247-4 -55°C ~ 175°C 3284 pF @ 400 V 2.63V @ 20mA | Other | NTH4L012N065M3S |
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![Part Image](["https://componentsearchengine.com/2D/0T/21458238.2.4.png",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/21458237.2.4.png",null,null])
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