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NTH4L160N120SC1 - onsemi

Description: High Junction Temperature; 1200V; High UIS, Surge Current, and Avalanche

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NTH4L160N120SC1 - onsemi PCB footprint - Other - Other - TO−247−4LD CASE 340CJ
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NTH4L160N120SC1 - onsemi  - 3D model - Other - TO−247−4LD CASE 340CJ
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NTH4L160N120SC1 Details

  • Manufacturer Part Number:

    NTH4L160N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    128 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    17.3 A

  • Drain-source On Resistance-Max:

    0.224 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    111 W

  • Pulsed Drain Current-Max (IDM):

    69 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

  • Turn-off Time-Max (toff):

    39 ns

  • Turn-on Time-Max (ton):

    40 ns

NTH4L160N120SC1 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other side of the board. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -40°C to 150°C.
  • The NTH4L160N120SC1 has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.
  • Yes, the NTH4L160N120SC1 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal mismatch between devices.
  • The recommended gate drive circuits for the NTH4L160N120SC1 involve using a gate driver IC with a suitable output current capability, a gate resistor to control the rise and fall times, and a bootstrap circuit to provide a high-side gate drive voltage.

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NTH4L160N120SC1 Overview

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