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NTH4L013N120M3S - onsemi

Description: 100% Avalanche Tested; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]; Ultra Low Gate Charge (QG(tot) = 254 nC); High Speed Switching with Low Capacitance (Coss = 262 pF); 15V to 18V Gate Drive; New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses; Halide Free and RoHS Compliant

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NTH4L013N120M3S Details

  • Manufacturer Part Number:

    NTH4L013N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Package Description:

    TO-247-4LD, 4 PIN

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    151 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    21 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    682 W

  • Pulsed Drain Current-Max (IDM):

    505 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTH4L013N120M3S Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or heat sink, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for airflow.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating temperature range, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using thermal interface materials and following proper soldering techniques.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • When selecting a gate driver for the NTH4L013N120M3S, consider the driver's output current capability, voltage rating, and rise/fall times. Ensure the driver can provide the required gate charge and discharge times to achieve the desired switching frequency and performance.
  • The NTH4L013N120M3S is sensitive to electrostatic discharge (ESD). To prevent damage, handle the device with ESD-protective equipment, follow proper handling and storage procedures, and ensure that the device is properly grounded during assembly and testing.

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