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NTH4L015N065SC1 - onsemi

Description: Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A; High Junction Temperature; 100% UIL Tested; RoHS Compliant; High Speed Switching and Low Capacitance; 650V rated

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NTH4L015N065SC1 - onsemi PCB footprint - Other - Other - TO−247−4LD CASE 340CJ ISSUE A_1
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NTH4L015N065SC1 - onsemi  - 3D model - Other - TO−247−4LD CASE 340CJ ISSUE A_1
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NTH4L015N065SC1 Details

  • Manufacturer Part Number:

    NTH4L015N065SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-03-27

  • Manufacturer:

    onsemi

  • YTEOL:

    6.05

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    164 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    39.33 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    753 W

  • Pulsed Drain Current-Max (IDM):

    859 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON CARBIDE

NTH4L015N065SC1 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB to further improve thermal performance.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator can be used to regulate the input voltage, and a biasing circuit with a resistor and capacitor can be used to set the gate-source voltage.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by excessive voltage or current. Handle the device with an ESD wrist strap or mat, and avoid touching the pins or exposing the device to moisture or extreme temperatures.
  • The maximum operating frequency depends on the specific application and the device's switching characteristics. Consult the datasheet for the device's switching characteristics and use simulation tools or consult with an application engineer to determine the maximum operating frequency for your specific application.
  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate-source voltage is properly set. Also, consider the current sharing and thermal management of the paralleled devices to ensure optimal performance and reliability.

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