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NTH4LN067N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 80 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF); Fast switching performance with robust body diode; Kelvin Source configuration; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 55 m Ω; Internal Gate Resistance: 0.6 Ω

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PCB Footprints
NTH4LN067N65S3H - onsemi PCB footprint - Other - Other - TO−247−4LD CASE 340CW
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NTH4LN067N65S3H - onsemi  - 3D model - Other - TO−247−4LD CASE 340CW
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NTH4LN067N65S3H Details

  • Manufacturer Part Number:

    NTH4LN067N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 4-LEAD, THIN LEADS

  • Manufacturer Package Code:

    340CW

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    422 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    266 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTH4LN067N65S3H Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities according to the temperature range.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to handle the device with ESD-protective equipment, use ESD-protected workbenches, and follow proper assembly and handling procedures.
  • Yes, the NTH4LN067N65S3H is qualified for automotive and high-reliability applications, but it's essential to follow the recommended operating conditions, and to consult with onsemi's application engineers for specific requirements and guidelines.
  • When selecting a gate driver for the NTH4LN067N65S3H, consider the device's gate charge, peak current, and voltage requirements. Choose a gate driver that can provide the necessary voltage and current to ensure reliable switching performance.

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NTH4LN067N65S3H Overview

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