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NTH4L080N120SC1 - onsemi

Description: High Junction Temperature; High UIS, Surge Current, and Avalanche; 1200V

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NTH4L080N120SC1 - onsemi PCB footprint - Other - Other - NTH4L080N120SC1-2
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NTH4L080N120SC1 - onsemi  - 3D model - Other - NTH4L080N120SC1-2
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NTH4L080N120SC1 Details

  • Manufacturer Part Number:

    NTH4L080N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    125 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

  • Turn-off Time-Max (toff):

    54 ns

  • Turn-on Time-Max (ton):

    28 ns

NTH4L080N120SC1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTH4L080N120SC1 is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure the device is operated within the recommended operating conditions.
  • For optimal thermal performance, use a multi-layer PCB with a thermal via structure, and ensure good thermal conductivity between the device and the heat sink. Refer to the onsemi application note for more details.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect the device from electrostatic discharge. Follow the recommended ESD protection circuitry specified in the datasheet.
  • The NTH4L080N120SC1 is manufactured according to onsemi's quality and reliability standards, which include compliance with industry standards such as AEC-Q101 and ISO/TS 16949.

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NTH4L080N120SC1 Overview

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