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NTH4L014N120M3P - onsemi

Description: TO247-4LD package for low common source inductance; 15V to 18V Gate Drive; New M3P technology: 14mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested

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NTH4L014N120M3P - onsemi PCB footprint - Other - Other - TO−247−4LD_2023-1
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NTH4L014N120M3P - onsemi  - 3D model - Other - TO−247−4LD_2023-1
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NTH4L014N120M3P Details

  • Manufacturer Part Number:

    NTH4L014N120M3P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    418 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    152 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    686 W

  • Pulsed Drain Current-Max (IDM):

    407 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTH4L014N120M3P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTH4L014N120M3P is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet, and ensure the device is operated within the specified voltage and current ranges.
  • For optimal thermal performance, use a multi-layer PCB with a thermal via under the device, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the device from electrostatic discharge. Follow the recommended ESD protection guidelines in the datasheet.
  • The NTH4L014N120M3P meets the quality and reliability standards of onsemi, including AEC-Q101 and ISO/TS 16949. Refer to the datasheet for more information.

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