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NTH4L040N120M3S - onsemi

Description: Ultra Low Gate Charge (QG(tot) = 75 nC); High Speed Switching with Low Capacitance (Coss = 80 pF); 15V to 18V Gate Drive; New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested; Halide Free and RoHS Compliant; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]

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NTH4L040N120M3S - onsemi PCB footprint - Other - Other - NTH4L040N120M3S_2023
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NTH4L040N120M3S - onsemi  - 3D model - Other - NTH4L040N120M3S_2023
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NTH4L040N120M3S Details

  • Manufacturer Part Number:

    NTH4L040N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Package Description:

    TO-247-4L, 4 PIN

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    143 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    54 A

  • Drain-source On Resistance-Max:

    0.054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    231 W

  • Pulsed Drain Current-Max (IDM):

    134 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTH4L040N120M3S Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The NTH4L040N120M3S has an integrated ESD protection circuit, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.
  • Yes, the NTH4L040N120M3S is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that ensures high reliability and low defect rates.
  • When selecting a gate driver for the NTH4L040N120M3S, consider the device's gate charge requirements, the desired switching frequency, and the power supply voltage. A gate driver with a high current capability and a low propagation delay is recommended to ensure reliable operation.

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