Description:TO247-4LD package for low common source inductance; 18V to 20V Gate Drive; New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested
The recommended PCB footprint for the NTH4L028N170M1 is a 5x6 mm pad with a 0.5 mm thermal via array. The datasheet provides a recommended land pattern, but it's essential to consult the onsemi application note for detailed guidelines.
To ensure proper cooling, it's crucial to provide a sufficient heat sink, thermal interface material, and airflow. The device's thermal resistance (RθJA) is 2.5°C/W, so a heat sink with a thermal resistance of 1°C/W or lower is recommended. Additionally, ensure good thermal contact between the device and heat sink.
The maximum allowed voltage transient for the NTH4L028N170M1 is 20% above the maximum rated voltage (170V) for a duration of 100 ms. However, it's essential to consult the onsemi application note for detailed guidelines on voltage transient protection.
Yes, the NTH4L028N170M1 is suitable for high-reliability applications. It's manufactured using a robust process, and onsemi provides a comprehensive set of reliability data, including FIT rates and MTBF calculations, to support high-reliability designs.
To protect the NTH4L028N170M1 from ESD, follow proper handling and storage procedures, such as using ESD-safe materials, grounding straps, and ionizers. During PCB assembly, ensure that the device is handled and stored in an ESD-controlled environment.
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NTH4L028N170M1 Overview
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