NTHL019N60S5F - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 252 nC); Low Time Related Output Capacitance (Typ. Coss(tr.) = 3174 pF); Optimized Capacitance; Excellent body diode performance (low Qrr, robust body diode); 650 V @ TJ = 150 °C; Typ. RDS(on) = 15.2 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Internal Gate Resistance: 3.5 Ω