NTHL033N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 188 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 28 mΩ