NTHL110N65S3F - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 58 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 98 mΩ

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