NTHL120N60S5Z - onsemi

Description: Ultra Low Gate Charge (Typ. Qg= 39 nC); Low Time Related Output Capacitance (Typ. Coss(tr.)= 547 pF); Optimized Capacitance; 650 V @ TJ = 150°C; Typ. RDS(on) = 96 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 3.5 Ω