NTMFS010N10GTWG - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 10.8 mΩ at VGS = 10 V, ID = 83 A ; Small Footprint (5 x 6 mm) for Compact Design; Low RDS(on) to Minimize Conduction Losses; Wide SOA; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant