NTMT080N60S5 - onsemi

Description: 650V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Ulta Low Gate Charge (Typ. Qg = 56.2 nC); Typ. RDS(on) = 64 mohm; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 5.66 Ω