NTMT280N60S5Z - onsemi

Description: Internal Gate Resistance: 5.1 Ω; 650V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Ulta Low Gate Charge (Typ. Qg = 18.1 nC); Typ. RDS(on) = 224 mohm; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee