NTP055N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 96 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 880 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 45 m Ω; Internal Gate Resistance: 0.6 Ω