NTP082N65S3F - onsemi

Description: 700 V @ TJ = 150 °C; Typ. RDS(on) = 70 mΩ; Ultra Low Gate Charge (Typ. Qg = 81 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF); Excellent body diode performance (low Qrr, robust body diode); 100% Avalanche Tested; RoHS Compliant; Optimized Capacitance

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