NTP125N60S5H - onsemi

Description: Typ. RDS(on) = 100 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 1.08 Ω; Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 25 nC); Low Time Related Output Capacitance (Typ. COSS(tr.) = 485 pF); 650 V @ TJ = 150°C