NXH160T120L2Q2F2S1G - onsemi

Description: 650 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 u?J; 1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 ?uJ; Baseplate; Thermistor; Solderable Pins; T−type Neutral Point Clamped Three−level Inverter Module