RAA2261104GNP#HA0 - Renesas Electronics
Description: The RAA226110 is a low-side driver designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies. The RAA226110 operates with a supply voltage from 6.5V to 18V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.The RAA226110 provides 5.8V gate drive voltage (VDRV) generated by an internal regulator that prevents the gate voltage from exceeding the maximum gate-source ratin