SCTW35N65G2VAG - STMicroelectronics
Description: • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitanceAutomotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
Description: • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitanceAutomotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
