SN74BCT241N - Texas Instruments

Description: State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • Package Options Include Plastic Small-Outline (DW) and Shrink Small-Outline (DB) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (J, N)