SN74BCT756N - Texas Instruments

Description:
BiCMOS Design Significantly Reduces ICCZ
ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
Open-Collector Outputs Drive Bus Lines or Buffer Memory Address Registers
Package Options Include Plastic Small-Outline Packages (DW) and Standard Plastic 300-mil DIPs (N)