TEA2209T - NXP

Description: Efficiency features • Forward conduction losses of the diode rectifier bridge are eliminated • Very low IC power consumption (2 mW) 2.2 Application features • Integrated high-voltage level shifters • Directly drives all four rectifier MOSFETs • Very low external part count • Integrated X-capacitor discharge (2 mA) • Self-supplying • Full-wave drive improving total harmonic distortion (THD) • S016 package