TP65H035G4WSQA - Renesas Electronics

Description: The TP65H035G4WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. Using proprietary technology, resulting in reduced internal package inductance and a simplified assembly process. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The device is also automotive-qualified to 175°C, having passed the AEC-Q101 stress tests for automotive-grade discrete semiconductors.Renesas' GaN powe