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TP65H035G4WSQA - Renesas Electronics

Description: The TP65H035G4WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. Using proprietary technology, resulting in reduced internal package inductance and a simplified assembly process. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The device is also automotive-qualified to 175°C, having passed the AEC-Q101 stress tests for automotive-grade discrete semiconductors.Renesas' GaN powe

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TP65H035G4WSQA - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3 Lead TO-247 Package
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3D Models
TP65H035G4WSQA - Renesas Electronics  - 3D model - Transistor Outline, Vertical - 3 Lead TO-247 Package
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TP65H035G4WSQA Details

  • Manufacturer Part Number:

    TP65H035G4WSQA

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    3

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    47.2 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

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TP65H035G4WSQA Overview

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