TP65H Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	TP65H070G4PS Renesas Electronics	1	The TP65H70G4PS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. The TP65H070G4PS is offered in an industry-standard TO-220 with a common source package configuration.	Transistor Outline, Vertical	TP65H070G4PS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H030G4PRS Renesas Electronics	1	N-Channel 650 V 55.7A (Tc) 192W (Tc) Surface Mount TOLT -40°C ~ 150°C	Other	TP65H030G4PRS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H150LSG Transphorm	1	650V GaN FET PQFN Series	Other	TP65H150LSG	3D model available Symbol and footprint available 3	1 Download Model
	TP65H015G5WS Renesas Electronics	1	N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3	Transistor Outline, Vertical	TP65H015G5WS	3D model available Symbol and footprint available 3	1 Download Model

	TP65H150G4PS Renesas Electronics	1	The TP65H150G4PS 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.The TP65H150G4PS is offered in an industry-standard TO-220 with a common source package configuration.	Transistor Outline, Vertical	TP65H150G4PS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H100G4PS Renesas Electronics	1	The TP65H100G4PS 650V 92mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas’ Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.The TP65H100G4PS is offered in an industry-standard TO-220 common source package configuration.	Transistor Outline, Vertical	TP65H100G4PS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H050G4YS Renesas Electronics	1	SuperGaN® FET in TO-247 (source tab) N-Channel 650 V 35A (Tc) 132W (Tc) Through Hole TO-247-4L	Other	TP65H050G4YS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H030G4PWS Renesas Electronics	1	The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.	Transistor Outline, Vertical	TP65H030G4PWS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H035G4WSQA Renesas Electronics	1	The TP65H035G4WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. Using proprietary technology, resulting in reduced internal package inductance and a simplified assembly process. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The device is also automotive-qualified to 175°C, having passed the AEC-Q101 stress tests for automotive-grade discrete semiconductors.Renesas' GaN powe	Transistor Outline, Vertical	TP65H035G4WSQA	3D model available Symbol and footprint available 3	1 Download Model
	TP65H050WS Transphorm	1	GANFET N-CH 650V 34A TO247-3	Transistor Outline, Vertical	TP65H050WS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H035WS Transphorm	1	650V Cascode GaN FET in TO-247 (source tab)	Transistor Outline, Vertical	TP65H035WS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H035WSQA Transphorm	1	MOSFET GAN FET 650V 47.2A TO247	Transistor Outline, Vertical	TP65H035WSQA	3D model available Symbol and footprint available 3	1 Download Model
	TP65H035G4WS Renesas Electronics	1	The TP65H035G4WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.The TP65H035G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.	Transistor Outline, Vertical	TP65H035G4WS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H050G4WS Renesas Electronics	1	The TP65H050G4WS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. The TP65H050G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.	Transistor Outline, Vertical	TP65H050G4WS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H070G4RS-TR Transphorm	1	N-Channel 650 V 29A (Tc) 96W (Tc) Surface Mount TOLT , 85mOhm @ 18A, 10V , 638 pF @ 400 V , -55°C ~ 150°C (TJ)	Other	TP65H070G4RS-TR	3D model available Symbol and footprint available 3	1 Download Model

	TP65H150G4PS onsemi	1	MOSFET GAN FET 650V 13A TO220	Transistor Outline, Vertical	TP65H150G4PS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H150G4PS Transphorm	1	650V SuperGaN® GaN FET in TO-220 (source tab)	Transistor Outline, Vertical	TP65H150G4PS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H030G4PRS-TR Renesas Electronics	1	N-Channel 650 V 55.7A (Tc) 192W (Tc) Surface Mount TOLT	Other	TP65H030G4PRS-TR	3D model available Symbol and footprint available 3	1 Download Model
	TP65H015G5WS Transphorm	1	MOSFET GAN FET 650V 95A TO2 47	Transistor Outline, Vertical	TP65H015G5WS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H050G4WS Transphorm	1	MOSFET GAN FET 650V 34A TO247	Transistor Outline, Vertical	TP65H050G4WS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H035G4WSQA Transphorm	1	MOSFET GAN FET 650V 46.5A TO247	Transistor Outline, Vertical	TP65H035G4WSQA	3D model available Symbol and footprint available 3	1 Download Model
	TP65H050WSQA Transphorm	1	MOSFET GAN FET 650V 36A TO247	Transistor Outline, Vertical	TP65H050WSQA	3D model available Symbol and footprint available 3	1 Download Model
	TP65H035G4WS Transphorm	1	MOSFET GAN FET 650V 46.5A TO247	Transistor Outline, Vertical	TP65H035G4WS	3D model available Symbol and footprint available 3	1 Download Model
	TP65H070LSG-TR Transphorm	1	RF JFET Transistors GAN FET 650V 25A PQFN88	Other	TP65H070LSG-TR	3D model available Symbol and footprint available 3	1 Download Model
	TP65H480G4JSG-TR Transphorm	1	MOSFET GAN FET 650V 3.6A PQFN56	Other	TP65H480G4JSG-TR	3D model available Symbol and footprint available 3	1 Download Model
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