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TP65H030G4PWS - Renesas Electronics

Description: The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.

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PCB Footprints
TP65H030G4PWS - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247  3L
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3D Models
TP65H030G4PWS - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-247  3L
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TP65H030G4PWS Details

  • Manufacturer Part Number:

    TP65H030G4PWS

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

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TP65H030G4PWS Overview

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