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TP65H035WS - Transphorm

Description: 650V Cascode GaN FET in TO-247 (source tab)

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PCB Footprints
TP65H035WS - Transphorm PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TP65H035WS-1
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3D Models
TP65H035WS - Transphorm  - 3D model - Transistor Outline, Vertical - TP65H035WS-1
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TP65H035WS Details

  • Manufacturer Part Number:

    TP65H035WS

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Transphorm Inc

  • YTEOL:

    0

TP65H035WS Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves using a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. The layout should also ensure good thermal conduction to the heat sink or thermal pad.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including using a suitable heat sink, ensuring good thermal interface material (TIM) contact, and keeping the junction temperature (Tj) below the maximum rated value of 150°C.
  • When paralleling multiple TP65H035WS devices, it's crucial to ensure that each device has its own gate resistor and that the gate drive signals are properly synchronized. Additionally, the PCB layout should be designed to minimize inductance and ensure good thermal conduction.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current sense resistor, in conjunction with a controller or monitoring circuit.
  • The recommended gate drive voltage for the TP65H035WS is between 0V and 6V, with a maximum current limit of 10mA. It's essential to follow these limits to prevent damage to the device.

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