TP65H070G4PS - Renesas Electronics

Description: The TP65H70G4PS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge. The TP65H070G4PS is offered in an industry-standard TO-220 with a common source package configuration.