TPC8129 - Toshiba

Description: Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA)