Part Image

TW045N120C - Toshiba

Description: N-ch SiC MOSFET, 1200 V, 0.045 Ω(typ.)@18V, TO-247, 3rd Gen.

Download TW045N120C Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Layers
    Zoom
    Zoom Full
    Middle click on footprint to measure