Part Image

1EDI60N12AF - Infineon

Description: Gate Drivers

Download 1EDI60N12AF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
1EDI60N12AF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 1EDI60N12AF
click to zoom
3D Models
1EDI60N12AF - Infineon  - 3D model - Small Outline Packages - 1EDI60N12AF
click to zoom

1EDI60N12AF Details

  • Manufacturer Part Number:

    1EDI60N12AF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • High Side Driver:

    NO

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    PUSH-PULL BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    10 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Seated Height-Max:

    1.75 mm

  • Supply Voltage-Max:

    17 V

  • Supply Voltage-Min:

    3.1 V

  • Supply Voltage-Nom:

    5 V

  • Supply Voltage1-Max:

    35 V

  • Supply Voltage1-Min:

    10 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Turn-off Time:

    0.15 µs

  • Turn-on Time:

    0.142 µs

  • Width:

    3.9 mm

1EDI60N12AF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 1EDI60N12AF is -40°C to 150°C.
  • The recommended gate resistor value for the 1EDI60N12AF is between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the 1EDI60N12AF can be used in a half-bridge configuration, but it requires a separate gate driver for each switch and a bootstrap circuit for the high-side switch.
  • The maximum allowed voltage slew rate for the 1EDI60N12AF is 10 kV/μs, but it's recommended to limit it to 5 kV/μs for reliable operation.
  • Yes, the 1EDI60N12AF is suitable for high-frequency switching applications up to 100 kHz, but the switching frequency should be limited to 50 kHz for optimal performance and reliability.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

1EDI60N12AF Overview

Use the download button to access the 1EDI60N12AF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 1EDI6, or try a keyword search, such as MOSFET Drivers

Parts related to 1EDI60N12AF

Showing 0 results