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1N4454-TR - Vishay

Description: Diodes - General Purpose, Power, Switching Vr/100V Io/10mA

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PCB Footprints
1N4454-TR - Vishay PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO-35 *
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3D Models
1N4454-TR - Vishay  - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO-35 *
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1N4454-TR Details

  • Manufacturer Part Number:

    1N4454-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Unknown

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Application:

    FAST RECOVERY

  • Breakdown Voltage-Min:

    75 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JEDEC-95 Code:

    DO-35

  • JESD-30 Code:

    O-XALF-W2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    0.5 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    0.15 A

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.5 W

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    75 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver (Sn/Ag)

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Time@Peak Reflow Temperature-Max (s):

    30

1N4454-TR Frequently Asked Questions (FAQs)

  • The recommended soldering temperature for the 1N4454-TR is between 250°C to 260°C for a maximum of 10 seconds.
  • Yes, the 1N4454-TR is a high-speed switching diode with a fast recovery time of 50 ns, making it suitable for high-frequency applications up to 1 GHz.
  • The maximum allowable power dissipation for the 1N4454-TR is 500 mW at a temperature of 25°C, and it decreases as the temperature increases.
  • No, the 1N4454-TR is not a radiation-hardened device. It is not designed to withstand high levels of radiation and should not be used in radiation-intensive applications.
  • The equivalent series resistance (ESR) of the 1N4454-TR is typically around 1 ohm, but this value can vary depending on the frequency and operating conditions.

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1N4454-TR Overview

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