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1N4471US - Microsemi Corporation

Description: Zener Diodes Voltage Regulator

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1N4471US - Microsemi Corporation - PCB symbol
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1N4471US - Microsemi Corporation PCB footprint - Other - Other - JANTXV1N5806UST/R-1
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1N4471US Details

  • Manufacturer Part Number:

    1N4471US

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    MELF-2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    METALLURGICALLY BONDED

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • JESD-30 Code:

    O-LELF-R2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    1.5 W

  • Reference Voltage-Nom:

    18 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

  • Voltage Tol-Max:

    5%

  • Working Test Current:

    14 mA

1N4471US Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N4471US is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
  • To ensure proper biasing, the 1N4471US requires a minimum of 1.5V reverse bias voltage and a maximum of 5V forward bias voltage. Additionally, the device should be operated within the recommended current limits to prevent overheating.
  • The maximum power dissipation of the 1N4471US is 500mW, and it is essential to ensure that the device does not exceed this limit to prevent overheating and damage.
  • Yes, the 1N4471US can be used in high-frequency applications up to 1GHz, but it is essential to consider the device's capacitance and inductance when designing the circuit to ensure optimal performance.
  • Yes, the 1N4471US is a radiation-hardened device, making it suitable for use in space and other high-radiation environments. It can withstand a total ionizing dose (TID) of up to 100kRad(Si).

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1N4471US Overview

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1N4471US Alternates

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Image Part Number Model
Part Image JANTXV1N4471US Sensitron Semiconductors

Zener Diode, 18V V(Z), 5%, 1.5W, Silicon, Unidirectional
Part Image 1N4471US Sensitron Semiconductors

Zener Diode, 18V V(Z), 1.5W, Silicon, Unidirectional
Part Image 1N4471US Microchip Technology Inc

Zener Diode, 18V V(Z), 5%, 1.5W, Silicon, Unidirectional
Part Image JANTXV1N4471US Microsemi Corporation (now Microchip)

Zener Diode, 18V V(Z), 5%, 1.5W, Silicon, Unidirectional
Part Image CDLL4471 Microsemi Corporation (now Microchip)

Zener Diode, 18V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-213AB
For a full list of alternate parts for 1N4471US, check out Findchips.com