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1N5225B-TAP - Vishay

Description: Zener Diode 3 V 500 mW ±5% Through Hole DO-204AH (DO-35)

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PCB Footprints
1N5225B-TAP - Vishay PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO-35 (DO-204AH)_1N52xx
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3D Models
1N5225B-TAP - Vishay  - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO-35 (DO-204AH)_1N52xx
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1N5225B-TAP Details

  • Manufacturer Part Number:

    1N5225B-TAP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DO-35, 2 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • Dynamic Impedance-Max:

    29 Ω

  • JEDEC-95 Code:

    DO-204AH

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.5 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Reference Voltage-Nom:

    3 V

  • Surface Mount:

    NO

  • Technology:

    ZENER

  • Terminal Finish:

    Tin/Silver (Sn96.5Ag3.5)

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Voltage Tol-Max:

    5%

  • Working Test Current:

    20 mA

1N5225B-TAP Frequently Asked Questions (FAQs)

  • The recommended soldering temperature for the 1N5225B-TAP is between 250°C to 260°C for a maximum of 10 seconds.
  • Yes, the 1N5225B-TAP is a high-speed switching diode with a fast recovery time of 4 ns, making it suitable for high-frequency applications up to 1 GHz.
  • The maximum allowable power dissipation for the 1N5225B-TAP is 500 mW at a temperature of 25°C.
  • No, the 1N5225B-TAP is not a radiation-hardened device. It is not designed to withstand high levels of radiation and should not be used in applications where radiation is a concern.
  • The equivalent series resistance (ESR) of the 1N5225B-TAP is typically around 1.5 ohms.

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1N5225B-TAP Overview

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