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1N5282 - onsemi

Description: Small Signal Diode

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1N5282 - onsemi - PCB symbol
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PCB Footprints
1N5282 - onsemi PCB footprint - Other - Other - DIO_1N5282
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1N5282 Details

  • Manufacturer Part Number:

    1N5282

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    Axial Lead

  • Package Description:

    DO-35, 2 PIN

  • Manufacturer Package Code:

    017AG

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    onsemi

  • YTEOL:

    5.78

  • Application:

    GENERAL PURPOSE

  • Breakdown Voltage-Min:

    80 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JEDEC-95 Code:

    DO-204AH

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    4 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Power Dissipation-Max:

    0.5 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    80 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    55 V

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N5282 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5282 is -65°C to +175°C, although the datasheet only specifies the electrical characteristics at 25°C.
  • To ensure stable zener operation, the 1N5282 should be biased with a minimum current of 1 mA and a maximum current of 50 mA, as specified in the datasheet. Additionally, the voltage across the diode should be within the recommended operating range.
  • The maximum power dissipation of the 1N5282 is 500 mW, which is calculated based on the maximum junction temperature and thermal resistance. This value should not be exceeded to prevent overheating and damage to the device.
  • While the 1N5282 can be used as a voltage regulator, it is not recommended due to its limited power handling capability and relatively high dynamic impedance. A dedicated voltage regulator IC would be a better choice for most applications.
  • To prevent electrostatic discharge (ESD) damage to the 1N5282, it is recommended to handle the device with ESD-safe tools and equipment, and to follow proper ESD handling procedures. Additionally, the device should be stored in an ESD-safe environment.

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1N5282 Overview

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1N5282 Alternates

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Image Part Number Model
Part Image 1N5282TR onsemi

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 80V V(RRM), Silicon, DO-204AH
Part Image 1N5282TR Fairchild Semiconductor Corporation

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 80V V(RRM), Silicon, DO-35