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1N5364B-TP - MCC

Description: Zener Diodes

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PCB Footprints
1N5364B-TP - MCC PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO-15
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3D Models
1N5364B-TP - MCC  - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO-15
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1N5364B-TP Details

  • Manufacturer Part Number:

    1N5364B-TP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DO-15

  • Package Description:

    PACKAGE-2

  • Pin Count:

    2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    5.55

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • Dynamic Impedance-Max:

    10 Ω

  • JEDEC-95 Code:

    DO-15

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e3

  • Knee Impedance-Max:

    150 Ω

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    5 W

  • Qualification Status:

    Not Qualified

  • Reference Voltage-Nom:

    33 V

  • Reverse Current-Max:

    0.5 µA

  • Surface Mount:

    NO

  • Technology:

    ZENER

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Voltage Tol-Max:

    5%

  • Working Test Current:

    40 mA

1N5364B-TP Frequently Asked Questions (FAQs)

  • The recommended soldering temperature for the 1N5364B-TP is between 250°C to 260°C for a maximum of 10 seconds.
  • Yes, the 1N5364B-TP is a high-speed switching diode with a fast recovery time, making it suitable for high-frequency applications up to 1 GHz.
  • The maximum allowable power dissipation for the 1N5364B-TP is 3.5 watts at a temperature of 25°C.
  • No, the 1N5364B-TP is not a radiation-hardened device. It is not designed to withstand high levels of radiation and should not be used in radiation-intensive environments.
  • The storage temperature range for the 1N5364B-TP is -65°C to 150°C.

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1N5364B-TP Overview

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Part Image MX1N5364BTR Microchip Technology Inc

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Part Image 1N5364BE3/TR8 Microsemi Corporation (now Microchip)

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Part Image 1N5364BE3/TR13 Microsemi Corporation (now Microchip)

Zener Diode, 33V V(Z), 5%, 5W, Silicon, Unidirectional, DO-201AE

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