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1N5555 - Microsemi Corporation

Description: TVS DIODE 30.5V 47.5V DO13

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PCB Footprints
1N5555 - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO-13 (DO-202AA)
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3D Models
1N5555 - Microsemi Corporation  - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO-13 (DO-202AA)
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1N5555 Details

  • Manufacturer Part Number:

    1N5555

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    DO-13

  • Package Description:

    HERMETIC SEALED, METAL, DO-13, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Breakdown Voltage-Min:

    33 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-202AA

  • JESD-30 Code:

    O-MALF-W2

  • JESD-609 Code:

    e0

  • Non-rep Peak Rev Power Dis-Max:

    1500 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    1 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    30.5 V

  • Surface Mount:

    NO

  • Technology:

    AVALANCHE

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N5555 Frequently Asked Questions (FAQs)

  • The 1N5555 can operate from -65°C to 175°C, making it suitable for high-reliability applications.
  • Yes, the 1N5555 is designed to be radiation-hardened, making it suitable for use in space and other high-radiation environments.
  • The maximum power dissipation for the 1N5555 is 500 mW, making it suitable for low-power applications.
  • Yes, the 1N5555 is compatible with lead-free soldering, making it suitable for use in RoHS-compliant applications.
  • The typical reverse recovery time for the 1N5555 is 2-3 microseconds, making it suitable for high-frequency applications.

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1N5555 Overview

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1N5555 Alternates

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Image Part Number Model
Part Image JAN1N5555 Silicon Transistor Corporation

Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-13

Part Image 1N5555E3 Microsemi Corporation (now Microchip)

Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA

Part Image 1N5555 SMSC

Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-13

Part Image JANTX1N5555 Silicon Transistor Corporation

Trans Voltage Suppressor Diode, 1500W, 30.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-13